H. Enomoto, Hai Duc Nguyen, K. Inoue, S. Sakamoto, T. Okumura, N. Nishiyama, S. Kondo, S. Arai
{"title":"硅衬底上薄膜GaInAsP有线波导晶圆键合方法的比较","authors":"H. Enomoto, Hai Duc Nguyen, K. Inoue, S. Sakamoto, T. Okumura, N. Nishiyama, S. Kondo, S. Arai","doi":"10.1109/INOW.2008.4634549","DOIUrl":null,"url":null,"abstract":"SiO<sub>2</sub>/SiO<sub>2</sub> direct wafer bonding and BCB bonding have been compared to realize membrane GalnAsP wired waveguides on Si Substrate. Bonding environment and pressure were essential for BCB bonding and SiO<sub>2</sub> direct bonding, respectively.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"528 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparison of wafer bonding methods of membrane GaInAsP wired waveguides on Si substrate\",\"authors\":\"H. Enomoto, Hai Duc Nguyen, K. Inoue, S. Sakamoto, T. Okumura, N. Nishiyama, S. Kondo, S. Arai\",\"doi\":\"10.1109/INOW.2008.4634549\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiO<sub>2</sub>/SiO<sub>2</sub> direct wafer bonding and BCB bonding have been compared to realize membrane GalnAsP wired waveguides on Si Substrate. Bonding environment and pressure were essential for BCB bonding and SiO<sub>2</sub> direct bonding, respectively.\",\"PeriodicalId\":112256,\"journal\":{\"name\":\"2008 International Nano-Optoelectronics Workshop\",\"volume\":\"528 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Nano-Optoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INOW.2008.4634549\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Nano-Optoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INOW.2008.4634549","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of wafer bonding methods of membrane GaInAsP wired waveguides on Si substrate
SiO2/SiO2 direct wafer bonding and BCB bonding have been compared to realize membrane GalnAsP wired waveguides on Si Substrate. Bonding environment and pressure were essential for BCB bonding and SiO2 direct bonding, respectively.
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