细胞距离和孔接触密度对中子诱导的多细胞扰动的影响

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI:10.1587/TRANSELE.E98.C.298

J. Furuta, Kazutoshi Kobayashi, H. Onodera

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引用次数: 29

摘要

我们在65nm的体CMOS工艺中测量了触发器(FFs)上中子诱导的单事件扰动(seu)和多单元扰动(mcu)。测量结果表明，MCU / SEU可达23.4%，并随锁存器之间的距离呈指数级下降。通过在ff之间插入良好接触阵列，可以大幅降低MCU速率。通过在电源和地轨下插入良好接触阵列，mcu的数量从110个减少到1个。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of cell distance and well-contact density on neutron-induced Multiple Cell Upsets

We measured neutron-induced Single Event Upsets (SEUs) and Multiple Cell Upsets (MCUs) on Flip-Flops (FFs) in a 65 nm bulk CMOS process. Measurement results show that MCU / SEU is up to 23.4% and is exponentially decreased by the distance between latches on FFs. MCU rates can drastically be reduced by inserting well-contact arrays between FFs. The number of MCUs is reduced from 110 to 1 by inserting a well-contact array under power and ground rails.

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2013 IEEE International Reliability Physics Symposium (IRPS)

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