{"title":"一种用于卫星通信相控阵天线的新型ka波段GaN移相器","authors":"S. Mener, R. Gillard, L. Roy","doi":"10.1109/ANTEM.2016.7550192","DOIUrl":null,"url":null,"abstract":"A Ka-band phase shifter is a key component of phased array antennas for SatCom applications. By using GaN technology, large power handling capability and high frequency operation can be achieved. In this paper, a HEMT GaN switch using a metal gate of 0.15μm is designed at 30 GHz for signal levels up to 37 dBm. From this efficient GaN switch, a compact and innovative monolithic phase-shifter is proposed for Ka-band operation with a 2-bit phase resolution and attractive insertion loss, isolation and bandwidth performance.","PeriodicalId":447985,"journal":{"name":"2016 17th International Symposium on Antenna Technology and Applied Electromagnetics (ANTEM)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A novel Ka-band GaN phase shifter for SATCOM phased-array antennas\",\"authors\":\"S. Mener, R. Gillard, L. Roy\",\"doi\":\"10.1109/ANTEM.2016.7550192\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Ka-band phase shifter is a key component of phased array antennas for SatCom applications. By using GaN technology, large power handling capability and high frequency operation can be achieved. In this paper, a HEMT GaN switch using a metal gate of 0.15μm is designed at 30 GHz for signal levels up to 37 dBm. From this efficient GaN switch, a compact and innovative monolithic phase-shifter is proposed for Ka-band operation with a 2-bit phase resolution and attractive insertion loss, isolation and bandwidth performance.\",\"PeriodicalId\":447985,\"journal\":{\"name\":\"2016 17th International Symposium on Antenna Technology and Applied Electromagnetics (ANTEM)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 17th International Symposium on Antenna Technology and Applied Electromagnetics (ANTEM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ANTEM.2016.7550192\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 17th International Symposium on Antenna Technology and Applied Electromagnetics (ANTEM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ANTEM.2016.7550192","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel Ka-band GaN phase shifter for SATCOM phased-array antennas
A Ka-band phase shifter is a key component of phased array antennas for SatCom applications. By using GaN technology, large power handling capability and high frequency operation can be achieved. In this paper, a HEMT GaN switch using a metal gate of 0.15μm is designed at 30 GHz for signal levels up to 37 dBm. From this efficient GaN switch, a compact and innovative monolithic phase-shifter is proposed for Ka-band operation with a 2-bit phase resolution and attractive insertion loss, isolation and bandwidth performance.
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