基于硅中间层的宽IO存储器接口时序分析

K. Chandrasekar, D. Oh, Arif Rahman
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引用次数: 3

摘要

未来高端应用(如图形、200G/400G网络和高性能计算)对内存带宽的需求正在推动对更多“片上存储器”的需求。基于硅Interposer的2.5D集成提供了一种中间途径,通过在封装中集成存储器来实现高内存带宽。本文讨论了在硅中间层技术中实现宽IO存储接口的时序预算分析。传统的用于DDR接口中关闭系统时序的信号和功率完整性(SI/PI)分析不能直接应用于“片对片场景”,因为它往往需要大量的电磁(EM)模拟,因此往往很耗时。此外,对总线活动和IO带宽/密度/速度的假设是2.5D内存客户应用程序所独有的。将片外双数据速率(DDR)内存接口的传统假设应用到“封装内”内存接口可能会导致芯片/封装和板级的额外成本开销。本文的主要贡献在于提供了一种精确的时间效率高的基于SPICE的建模方法,以经济有效地设计和优化2.5D内存应用,以满足所需的时序规范。本文指出,在FPGA应用中,同步开关噪声(SSN)是导致宽内存接口闭眼的主要损害,最坏情况下时序抖动数为130ps。达到500 mhz 1 ghz DDR运营速度主要基于需要更严格的应用程序——调优on-die去耦电容,生产寄生电感,互连长度和IO驱动力量。但是,宽IO包内系统(SIP)内存的功率、带宽和延迟优势使得额外的开发工作是值得的。
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Timing analysis for wide IO memory interface applications with silicon interposer
Memory bandwidth requirements for future high-end applications such as graphics, 200G/400G networking and high performance computing is driving the need for more “on-chip memory”. Silicon Interposer based 2.5D integration provides an intermediate path to achieving high memory bandwidth by integrating memory in package. This paper discusses timing budget analysis for realizing wide IO memory interfaces in silicon interposer technology. Traditional signal and power integrity (SI/PI) analysis for closing system timing in DDR interfaces cannot be applied directly to “chip-to-chip scenarios” as it tends to be time consuming because of need for extensive electromagnetic (EM) simulations. In addition, the assumptions on bus activity and IO bandwidth/density/speed are unique to 2.5D memory customer applications. Applying traditional assumptions from off-chip double data rate (DDR) memory interfaces to “in-package” memory interfaces can lead to additional cost overhead at chip/package and board level. The key contributions of this paper are in providing an accurate time efficient SPICE based modeling methodology to design and optimize 2.5D memory applications cost effectively to meet desired timing specifications. This paper notes simultaneous switching noise (SSN) to be a major impairment leading to eye closure in wide memory interfaces with worst case timing jitter numbers of the order of 130ps in FPGA applications. Achieving 500MHz to 1GHz DDR operating speeds primarily require a more rigorous application - based tuning of on-die decoupling capacitance, PDN inductive parasitics, interconnect length and IO drive strength. But the power, bandwidth and latency benefits of wide IO system-in-package (SIP) memory make the additional development effort worthwhile.
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