T. Matsushima, N. Yamauchi, T. Shirai, T. Yoshihara, Y. Hayasaki, T. Ueda, I. Kanno, K. Wasa, H. Kotera
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High performance 4 GHz FBAR prepared by Pb(Mn,Nb)O3-Pb(Zr,Ti)O3 sputtered thin films
The 4 GHz film resontors have been fabricated by sputtered Pb(Mn,Nb)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin films. The PMnN-PZT thin films were deposited on (100)MgO substrates. The thin films showed tetragonal crystal structure and highly (001) orientation. The film bulk acoustic resonators (FBAR) composed by PMnN-PZT thin films were fabricated by MEMS technology. RF properties of the resonator were evaluated by VNA (Vector Network Analyzer). The electro-mechanical coupling constant kt and Q-value for PMnN-PZT thin films were 0.7 and 157, at 4.17GHz, respectively. These values obtained by sputtered thin films are highest comparing with those of previously reported PZT-BAW resonators.
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