D. Gilmer, S. Koveshnikov, B. Butcher, G. Bersuker, A. Kalantarian, M. Sung, R. Geer, Y. Nishi, P. Kirsch, R. Jammy
{"title":"基于HfO2的RRAM具有优越的灯丝形成控制，可实现+/−1V下1µA至20µA的高性能低功耗工作","authors":"D. Gilmer, S. Koveshnikov, B. Butcher, G. Bersuker, A. Kalantarian, M. Sung, R. Geer, Y. Nishi, P. Kirsch, R. Jammy","doi":"10.1109/VLSI-TSA.2012.6210102","DOIUrl":null,"url":null,"abstract":"Low operation current and voltage range are required for scaled low power RRAM devices in high density memory cell arrays. In this work, for the first time we demonstrate 1 uA, +/- 1V bipolar switching of TiN/HfOx/Zr/W RRAM devices. High switching performance up to 108 cycles at low power and a 100× reduction of the high-resistance-state current was achieved by identification and utilization of key parameters for establishing superior control of the conductive filament formation.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Superior filament formation control in HfO2 based RRAM for high-performance low-power operation of 1 µA to 20 µA at +/− 1V\",\"authors\":\"D. Gilmer, S. Koveshnikov, B. Butcher, G. Bersuker, A. Kalantarian, M. Sung, R. Geer, Y. Nishi, P. Kirsch, R. Jammy\",\"doi\":\"10.1109/VLSI-TSA.2012.6210102\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low operation current and voltage range are required for scaled low power RRAM devices in high density memory cell arrays. In this work, for the first time we demonstrate 1 uA, +/- 1V bipolar switching of TiN/HfOx/Zr/W RRAM devices. High switching performance up to 108 cycles at low power and a 100× reduction of the high-resistance-state current was achieved by identification and utilization of key parameters for establishing superior control of the conductive filament formation.\",\"PeriodicalId\":388574,\"journal\":{\"name\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2012.6210102\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Superior filament formation control in HfO2 based RRAM for high-performance low-power operation of 1 µA to 20 µA at +/− 1V
Low operation current and voltage range are required for scaled low power RRAM devices in high density memory cell arrays. In this work, for the first time we demonstrate 1 uA, +/- 1V bipolar switching of TiN/HfOx/Zr/W RRAM devices. High switching performance up to 108 cycles at low power and a 100× reduction of the high-resistance-state current was achieved by identification and utilization of key parameters for establishing superior control of the conductive filament formation.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
