GeCl4/SiCl4流量比对MCVD工艺中锗掺入的影响

2013 IEEE 4th International Conference on Photonics (ICP) Pub Date : 2013-12-19 DOI:10.1109/ICP.2013.6687140

K. A. Mat-Sharif, M. I. Zulkifli, S. Z. Muhamad-Yassin, N. Tamchek, S. M. Aljamimi, A. Yusoff, Y. M. Amin, S. Shafiqah, H. Abdul-Rashid

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引用次数: 7

摘要

在高温无磷条件下，通过改变GeCl4/SiCl4的流量比，研究了MCVD工艺中锗和硅的共沉积。比值范围为0.1 ~ 0.6，沉积温度为2100℃。利用电子能谱SEM-EDX分析了锗在硅基体中的掺入。实验结果与理论结果进行了比较，如沉积层厚度和锗在硅中的摩尔分数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of GeCl4/SiCl4 flow ratio on Germanium incorporation in MCVD process

Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX. The experimental result is compared to theory such as thickness deposited layer and mole fraction of germanium in silica.

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2013 IEEE 4th International Conference on Photonics (ICP)

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