{"title":"基于嵌入网络的65nm cmos 275GHz至296GHz功率放大器，峰值功率增益29.4dB","authors":"Jianguo Yu, Zhiyao Wang","doi":"10.1109/ICCC56324.2022.10065736","DOIUrl":null,"url":null,"abstract":"This paper reports the design and simulation of 275GHz to 296GHz power amplifier employing embedding linear lossless reciprocity (LLR) network to boost maximum available gain to maximum achievable gain in 65nm CMOS process. The LLR network is realized by an inductor between the gate and drain of the transistor. The final simulation results show that the gain is greater than lOdB from 275GHz to 296GHz, and reaches a 29.4dB peak at 275GHz. And at 275GHz, saturated output power is -ldBm, IdB compression point of output power is -3.5dBm.","PeriodicalId":263098,"journal":{"name":"2022 IEEE 8th International Conference on Computer and Communications (ICCC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 275GHz to 296GHz Power Amplifier Using Embedding Network in 65nm-CMOS with 29.4dB Peak Power Gain\",\"authors\":\"Jianguo Yu, Zhiyao Wang\",\"doi\":\"10.1109/ICCC56324.2022.10065736\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the design and simulation of 275GHz to 296GHz power amplifier employing embedding linear lossless reciprocity (LLR) network to boost maximum available gain to maximum achievable gain in 65nm CMOS process. The LLR network is realized by an inductor between the gate and drain of the transistor. The final simulation results show that the gain is greater than lOdB from 275GHz to 296GHz, and reaches a 29.4dB peak at 275GHz. And at 275GHz, saturated output power is -ldBm, IdB compression point of output power is -3.5dBm.\",\"PeriodicalId\":263098,\"journal\":{\"name\":\"2022 IEEE 8th International Conference on Computer and Communications (ICCC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE 8th International Conference on Computer and Communications (ICCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCC56324.2022.10065736\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 8th International Conference on Computer and Communications (ICCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCC56324.2022.10065736","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 275GHz to 296GHz Power Amplifier Using Embedding Network in 65nm-CMOS with 29.4dB Peak Power Gain
This paper reports the design and simulation of 275GHz to 296GHz power amplifier employing embedding linear lossless reciprocity (LLR) network to boost maximum available gain to maximum achievable gain in 65nm CMOS process. The LLR network is realized by an inductor between the gate and drain of the transistor. The final simulation results show that the gain is greater than lOdB from 275GHz to 296GHz, and reaches a 29.4dB peak at 275GHz. And at 275GHz, saturated output power is -ldBm, IdB compression point of output power is -3.5dBm.
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