{"title":"太赫兹应用的砷化镓肖特基势垒二极管","authors":"T. Crowe, W. Peatman, P. Wood, Xiaolei Liu","doi":"10.1109/MWSYM.1992.188196","DOIUrl":null,"url":null,"abstract":"The authors review the basic operation of Schottky mixer elements, and consider the factors that limit the high-frequency performance of these devices. The design process used to achieve the best heterodyne receiver performance is discussed. Recent results with ultra-small Schottky anodes are presented, and conclusions are drawn about the future of Schottky diodes at terahertz frequencies.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"130 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"GaAs Schottky barrier diodes for THz applications\",\"authors\":\"T. Crowe, W. Peatman, P. Wood, Xiaolei Liu\",\"doi\":\"10.1109/MWSYM.1992.188196\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors review the basic operation of Schottky mixer elements, and consider the factors that limit the high-frequency performance of these devices. The design process used to achieve the best heterodyne receiver performance is discussed. Recent results with ultra-small Schottky anodes are presented, and conclusions are drawn about the future of Schottky diodes at terahertz frequencies.<<ETX>>\",\"PeriodicalId\":165665,\"journal\":{\"name\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"volume\":\"130 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1992.188196\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.188196","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The authors review the basic operation of Schottky mixer elements, and consider the factors that limit the high-frequency performance of these devices. The design process used to achieve the best heterodyne receiver performance is discussed. Recent results with ultra-small Schottky anodes are presented, and conclusions are drawn about the future of Schottky diodes at terahertz frequencies.<>
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