作为频率源的硅芯片

M. McCorquodale, B. Gupta, W. Armstrong, R. Beaudouin, G. Carichner, P. Chaudhari, N. Fayyaz, Nathaniel Gaskin, J. Kuhn, D. Linebarger, E. Marsman, J. O'Day, S. M. Pernia, D. Senderowicz
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引用次数: 35

摘要

提出了一种单片非封装硅芯片作为频率源,适用于石英晶体谐振器(XTAL)和振荡器(XO)的替代。频率源参考自由运行,频率修整和温度补偿3GHz射频LC振荡器。可编程分频阵列使该设备能够提供6至133MHz的频率范围。后处理的法拉第屏蔽包含边缘电磁场,使设备能够以未包装的形式交付,这样它就可以组装成任何包装或通过任何组装技术。该器件在1.8-3.3V电源下耗散约2mA,在包括工业标准可靠性测试面板在内的所有工作条件下漂移不超过±300ppm。
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A silicon die as a frequency source
A monolithic and unpackaged silicon die is presented as a frequency source suitable for quartz crystal resonator (XTAL) and oscillator (XO) replacement. The frequency source is referenced to a free-running, frequency-trimmed and temperature-compensated 3GHz RF LC oscillator. A programmable divider array enables the device to provide frequencies ranging from 6 to 133MHz. A post-processed Faraday shield contains fringing electromagnetic fields and enables the device to be delivered in unpackaged form such that it can be assembled into any package or via any assembly technique. The device dissipates approximately 2mA from a 1.8–3.3V power supply and drifts no more than ±300ppm over all operating conditions including a panel of industry-standard reliability tests.
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