Jonathan B. Scott, M. Sayed, P. Schmitz, A. Parker
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Pulsed-bias/Pulsed-RF Device Measurement System Requirements
We describe a pulsed-bias, pulsed-RF device measurement system with high bias power (6A/40V), high RF power capability (50W at 2GHz and lOW at 50GHz), and high resolution (16-bit). This system is intended to support both RF characterisation outside device continuous safe operating area (SOA), and data-acquisition for device modelling. The system is modular and flexible, offers very small duty cycles (<0.001%) simultaneous wide dynamic range (75dB at 50GHz), and employs instruments which are already available. We present novel measurements on several GaAs devices and draw conclusions important for future device characterisation efforts.
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