采用氢退火技术制造高可靠性沟槽dmosfet

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856779

Sang-Gi Kim, Jongdae Kim, J. Koo, K. Nam, K. Cho

{"title":"采用氢退火技术制造高可靠性沟槽dmosfet","authors":"Sang-Gi Kim, Jongdae Kim, J. Koo, K. Nam, K. Cho","doi":"10.1109/ISPSD.2000.856779","DOIUrl":null,"url":null,"abstract":"A new trench corner rounding technique has been developed by using pull-back and hydrogen annealing process. This technique provides highly controllable trench corner rounding by micro structure transformation of silicon at the corner of the trench, leading to uniform gate oxide, higher breakdown voltage, and lower leakage current.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Trench corner rounding technology using hydrogen annealing for highly reliable trench DMOSFETs\",\"authors\":\"Sang-Gi Kim, Jongdae Kim, J. Koo, K. Nam, K. Cho\",\"doi\":\"10.1109/ISPSD.2000.856779\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new trench corner rounding technique has been developed by using pull-back and hydrogen annealing process. This technique provides highly controllable trench corner rounding by micro structure transformation of silicon at the corner of the trench, leading to uniform gate oxide, higher breakdown voltage, and lower leakage current.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856779\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856779","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

采用回拉和氢退火工艺，开发了一种新的沟槽圆角技术。该技术通过沟槽转角硅的微结构转变提供了高度可控的沟槽转角，从而实现栅极氧化均匀、击穿电压高、漏电流小。

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Trench corner rounding technology using hydrogen annealing for highly reliable trench DMOSFETs

A new trench corner rounding technique has been developed by using pull-back and hydrogen annealing process. This technique provides highly controllable trench corner rounding by micro structure transformation of silicon at the corner of the trench, leading to uniform gate oxide, higher breakdown voltage, and lower leakage current.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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