S. P. Pandey, R. Kushwah, Shyam Babu Singh, S. Akashe
{"title":"三栅MOSFET与双栅MOSFET的分析建模与比较","authors":"S. P. Pandey, R. Kushwah, Shyam Babu Singh, S. Akashe","doi":"10.1109/ICCCCM.2013.6648901","DOIUrl":null,"url":null,"abstract":"In this paper, we bring in the incomparable features of modification in symmetrical Triple-gate (TG) MOSFET. The modified structure of Triple gate (TG) MOSFET reduces short-channel effects (SCEs) in comparison of the Double-gate (DG) MOSFET model. The threshold voltage, the drain-induced barrier lowering (DIBL) and surface potential are calculated. We will also discuss a model for the trans-conductance, drain current and drain conductance. The proposed Triple-gate (TG) structure province increase in the trans-conductance and drain current and reduces the short-channel effects (SCEs), electric field and drain conductance and in comparison of the Double-gate (DG) MOSFET.","PeriodicalId":230396,"journal":{"name":"2013 International Conference on Control, Computing, Communication and Materials (ICCCCM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Analytical modeling and comparison of Triple gate MOSFET with Double gate MOSFET\",\"authors\":\"S. P. Pandey, R. Kushwah, Shyam Babu Singh, S. Akashe\",\"doi\":\"10.1109/ICCCCM.2013.6648901\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we bring in the incomparable features of modification in symmetrical Triple-gate (TG) MOSFET. The modified structure of Triple gate (TG) MOSFET reduces short-channel effects (SCEs) in comparison of the Double-gate (DG) MOSFET model. The threshold voltage, the drain-induced barrier lowering (DIBL) and surface potential are calculated. We will also discuss a model for the trans-conductance, drain current and drain conductance. The proposed Triple-gate (TG) structure province increase in the trans-conductance and drain current and reduces the short-channel effects (SCEs), electric field and drain conductance and in comparison of the Double-gate (DG) MOSFET.\",\"PeriodicalId\":230396,\"journal\":{\"name\":\"2013 International Conference on Control, Computing, Communication and Materials (ICCCCM)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Control, Computing, Communication and Materials (ICCCCM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCCCM.2013.6648901\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Control, Computing, Communication and Materials (ICCCCM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCCCM.2013.6648901","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analytical modeling and comparison of Triple gate MOSFET with Double gate MOSFET
In this paper, we bring in the incomparable features of modification in symmetrical Triple-gate (TG) MOSFET. The modified structure of Triple gate (TG) MOSFET reduces short-channel effects (SCEs) in comparison of the Double-gate (DG) MOSFET model. The threshold voltage, the drain-induced barrier lowering (DIBL) and surface potential are calculated. We will also discuss a model for the trans-conductance, drain current and drain conductance. The proposed Triple-gate (TG) structure province increase in the trans-conductance and drain current and reduces the short-channel effects (SCEs), electric field and drain conductance and in comparison of the Double-gate (DG) MOSFET.
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