{"title":"用于无线传感器应用的c类功率放大器/天线接口","authors":"K. Natarajan, J. Walling, D. Allstot","doi":"10.1109/RFIC.2011.5940713","DOIUrl":null,"url":null,"abstract":"A class-C power amplifier (PA) for operation as an antenna interface in body sensor network (BSN) applications is presented. It is fabricated in a 0.13 µm RF CMOS process for operation in the 400 MHz MedRadio band. It achieves a measured peak output power of −4 dBm and drain efficiency of 43%.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A class-C power amplifier/antenna interface for wireless sensor applications\",\"authors\":\"K. Natarajan, J. Walling, D. Allstot\",\"doi\":\"10.1109/RFIC.2011.5940713\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A class-C power amplifier (PA) for operation as an antenna interface in body sensor network (BSN) applications is presented. It is fabricated in a 0.13 µm RF CMOS process for operation in the 400 MHz MedRadio band. It achieves a measured peak output power of −4 dBm and drain efficiency of 43%.\",\"PeriodicalId\":448165,\"journal\":{\"name\":\"2011 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2011.5940713\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2011.5940713","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
摘要
介绍了一种用于人体传感器网络(BSN)天线接口的c类功率放大器(PA)。它采用0.13 μ m RF CMOS工艺制造,可在400 MHz MedRadio频段工作。测量到的峰值输出功率为- 4 dBm,漏极效率为43%。
A class-C power amplifier/antenna interface for wireless sensor applications
A class-C power amplifier (PA) for operation as an antenna interface in body sensor network (BSN) applications is presented. It is fabricated in a 0.13 µm RF CMOS process for operation in the 400 MHz MedRadio band. It achieves a measured peak output power of −4 dBm and drain efficiency of 43%.