{"title":"平面电路中毫米波二极管的大信号建模","authors":"D. Singh, C. Seashore, M. Gawronski","doi":"10.1109/irmm.1987.9126880","DOIUrl":null,"url":null,"abstract":"A simple and accurate experimental technique is described to determine the equivalent circuit parameters of millimeter wave (30–100 GHz) GaAs and InP Gunn diodes under large signal conditions for a planar microstrip circuit. The modeling has resulted in the development of microstrip oscillators and VCOs with excellent agreement between measured and calculated performance.","PeriodicalId":399243,"journal":{"name":"1987 Twelth International Conference on Infrared and Millimeter Waves","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Large signal modeling of millimeter wave gunn diodes for planar circuits\",\"authors\":\"D. Singh, C. Seashore, M. Gawronski\",\"doi\":\"10.1109/irmm.1987.9126880\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple and accurate experimental technique is described to determine the equivalent circuit parameters of millimeter wave (30–100 GHz) GaAs and InP Gunn diodes under large signal conditions for a planar microstrip circuit. The modeling has resulted in the development of microstrip oscillators and VCOs with excellent agreement between measured and calculated performance.\",\"PeriodicalId\":399243,\"journal\":{\"name\":\"1987 Twelth International Conference on Infrared and Millimeter Waves\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1987 Twelth International Conference on Infrared and Millimeter Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/irmm.1987.9126880\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 Twelth International Conference on Infrared and Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/irmm.1987.9126880","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Large signal modeling of millimeter wave gunn diodes for planar circuits
A simple and accurate experimental technique is described to determine the equivalent circuit parameters of millimeter wave (30–100 GHz) GaAs and InP Gunn diodes under large signal conditions for a planar microstrip circuit. The modeling has resulted in the development of microstrip oscillators and VCOs with excellent agreement between measured and calculated performance.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
