Simulation of resonant tunneling structures: Origin of the I-V multi-peak and plateau-like behaviour

Plateau-like behavior and multi-peak of the I-V curves of an AlAs/GaAs/AlAs double-barrier resonant tunneling diode combined with a layer of InAs QDs (QD-RTD) are simulated. Our simulation results show that the coupling between the energy level in the emitter QW (QD) and that in the central quantum well is the key point in understanding the origin of the I-V multi-peak and plateau-like structure. The embedded designed QD layer at the emitter spacer can enhance this effect. The effects of device temperature on the I-V characteristics are obtained. Our results provide the physical basis for understanding and utilizing the plateau-like behavior of I-V curves in designing resonant tunneling devices.