采用C4NP技术制备的50μm间距无铅微凸点

B. Dang, D. Shih, Stephen Buchwalter, Cornelia Tsang, Chirag S. Patel, J. Knickerbocker, P. Gruber, Sarah Knickerbocker, J. Garant, Krystyna Semkow, K. Ruhmer, E. Hughlett
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引用次数: 28

摘要

控制折叠芯片连接新工艺(C4NP)目前在IBM制造中用于倒装芯片封装的所有300 mm无铅晶圆碰撞。本研究探讨了C4NP技术在超细间距应用中的可扩展性。制备了可重复使用的C4NP玻璃模具,并对其进行了表征。在制造环境中,使用200毫米和300毫米晶圆演示了无铅焊料填充模具和晶圆转移。通过工艺优化和污染控制,这些小间距互连的早期演示实现了凸点产量的显著提高。讨论了50 μ m节距微凸点在晶圆检测计量方面面临的挑战。C4NP微凸点的机械强度已经用带有微凸点全面积阵列的测试模具进行了表征。
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50μm pitch Pb-free micro-bumps by C4NP technology
Controlled collapse chip connection new process (C4NP) is currently used in IBM manufacturing for all 300 mm Pb-free wafer bumping for flip chip packages. In this study, the extendibility of C4NP technology to ultra fine pitch applications has been explored. Reusable C4NP glass molds were fabricated and characterized for 50 mum pitch application. Mold fill and wafer transfer with Pb-free solders have been demonstrated using both 200 mm and 300 mm wafers in a manufacturing environment. Significant improvement in bump yield was achieved for these early demonstrations of fine pitch interconnections through process optimization and contamination control. Challenge in wafer inspection metrology is discussed for the 50 mum pitch micro-bumps. Mechanical strength of the C4NP micro-bumps has been characterized using test dies with a full area array of micro-bumps.
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