一种65nm纯CMOS一次性可编程存储器，采用在矩阵结构中实现的双端口防熔丝单元

2007 IEEE Asian Solid-State Circuits Conference Pub Date : 2007-11-01 DOI:10.1109/ASSCC.2007.4425768

K. Matsufuji, T. Namekawa, H. Nakano, H. Ito, O. Wada, N. Otsuka

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引用次数: 9

摘要

提出了一种采用防熔丝的纯CMOS一次性可编程(PCOP)存储器。PCOP存储器采用矩阵结构实现的双端口单元结构。这种架构实现了编程和读取性能的优化。解决了写干扰问题，实现了伪“1”读测试。利用65纳米纯CMOS逻辑技术开发了8 Kbit宏。单元面积为15.3 mm2，宏尺寸为0.244 mm2。

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A 65nm Pure CMOS one-time programmable memory using a two-port antifuse cell implemented in a matrix structure

A pure CMOS one-time programmable (PCOP) memory using an antifuse is presented. PCOP memory adopts two-port cell architecture implemented in a matrix structure. This architecture achieves optimization of performance both for programming and reading. Furthermore, it solves the write disturb problem and realizes pseudo "1" read test. An 8 Kbit macro is developed utilizing a 65 nm pure CMOS logic technology. The cell area and the macro size are 15.3 mum2 and 0.244 mm2, respectively.

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2007 IEEE Asian Solid-State Circuits Conference

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