集成2.4GHz CMOS F类功率放大器

2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI:10.1109/SMELEC.2006.380688

H. Zhe, A. bin A'ain, A. Kordesch

{"title":"集成2.4GHz CMOS F类功率放大器","authors":"H. Zhe, A. bin A'ain, A. Kordesch","doi":"10.1109/SMELEC.2006.380688","DOIUrl":null,"url":null,"abstract":"This work will explore the integration of a class-F power amplifier using CMOS technology. At 2.4 GHz, the fully integrated on-chip CMOS power amplifier can deliver 21.8 dBm output power with 43.95% efficiency. The design makes use of the C18 RF models provided by Silterra and design of spiral inductor using commercial synthesis software.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"An Integrated 2.4GHz CMOS Class F Power Amplifier\",\"authors\":\"H. Zhe, A. bin A'ain, A. Kordesch\",\"doi\":\"10.1109/SMELEC.2006.380688\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work will explore the integration of a class-F power amplifier using CMOS technology. At 2.4 GHz, the fully integrated on-chip CMOS power amplifier can deliver 21.8 dBm output power with 43.95% efficiency. The design makes use of the C18 RF models provided by Silterra and design of spiral inductor using commercial synthesis software.\",\"PeriodicalId\":136703,\"journal\":{\"name\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2006.380688\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380688","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本工作将探索利用CMOS技术集成f类功率放大器。在2.4 GHz时，完全集成的片上CMOS功率放大器输出功率为21.8 dBm，效率为43.95%。本设计利用Silterra公司提供的C18射频模型，利用商业合成软件设计螺旋电感。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

An Integrated 2.4GHz CMOS Class F Power Amplifier

This work will explore the integration of a class-F power amplifier using CMOS technology. At 2.4 GHz, the fully integrated on-chip CMOS power amplifier can deliver 21.8 dBm output power with 43.95% efficiency. The design makes use of the C18 RF models provided by Silterra and design of spiral inductor using commercial synthesis software.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 IEEE International Conference on Semiconductor Electronics

自引率

0.00%

发文量