{"title":"短沟道InGaSb-on-insulator FET:带结和不带结","authors":"Md Nur Kutubul Alam, M. Islam, Md Raifqul Islam","doi":"10.1109/INEC.2014.7460444","DOIUrl":null,"url":null,"abstract":"In this study the ballistic performance of III-V on insulator (XOI) and “junction less XOI” (JLXOI) nFET are investigated and compared by NEGF formalism, taking In0.3Ga0.7Sb as channel material. At 15nm gate length and 0.5nm EOT of gate dielectric the JLXOI shows significant improvement in threshold voltage (Vt) and ION with a fine tuned IOFF. Also the subthreshold slope (SS) reduced from 82.35mV/dec to 68.088mV/dec along with imporoved DIBL performance and simplified fabrication process.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Short channel InGaSb-on-insulator FET: With and without junctions\",\"authors\":\"Md Nur Kutubul Alam, M. Islam, Md Raifqul Islam\",\"doi\":\"10.1109/INEC.2014.7460444\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study the ballistic performance of III-V on insulator (XOI) and “junction less XOI” (JLXOI) nFET are investigated and compared by NEGF formalism, taking In0.3Ga0.7Sb as channel material. At 15nm gate length and 0.5nm EOT of gate dielectric the JLXOI shows significant improvement in threshold voltage (Vt) and ION with a fine tuned IOFF. Also the subthreshold slope (SS) reduced from 82.35mV/dec to 68.088mV/dec along with imporoved DIBL performance and simplified fabrication process.\",\"PeriodicalId\":188668,\"journal\":{\"name\":\"2014 IEEE International Nanoelectronics Conference (INEC)\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Nanoelectronics Conference (INEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INEC.2014.7460444\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2014.7460444","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Short channel InGaSb-on-insulator FET: With and without junctions
In this study the ballistic performance of III-V on insulator (XOI) and “junction less XOI” (JLXOI) nFET are investigated and compared by NEGF formalism, taking In0.3Ga0.7Sb as channel material. At 15nm gate length and 0.5nm EOT of gate dielectric the JLXOI shows significant improvement in threshold voltage (Vt) and ION with a fine tuned IOFF. Also the subthreshold slope (SS) reduced from 82.35mV/dec to 68.088mV/dec along with imporoved DIBL performance and simplified fabrication process.
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