采用可变费米势场板的新型高压LDMOS，可实现最佳的开关FOM和可靠性权衡

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694446

Yun Shi, Santosh K. Sharma, M. Zierak, R. Phelps, D. Cook, T. Letavic

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引用次数: 7

摘要

在本文中，我们讨论了一个集成的高压LDMOS在特定导通电阻(Ron, sp)、栅极电荷(Cgg)、准饱和和可靠性特性之间的基本设计权衡。提出了一种新颖的栅极图案设计，并在120v额定NLDMOS中实现。优化设计特性证明了30%的改进开关FOM (Ron, sp*Qgg)和一个稳健的Id, lin移位通过15年的寿命规格。新的设计技术被证明可以显著改善高压LDMOS设计的权衡。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Novel high voltage LDMOS using a variable fermi-potential field plate for best switching FOM and reliability tradeoff

In this paper, we discuss the fundamental design tradeoff among specific on-resistance (Ron, sp), gate charge (Cgg), quasi-saturation, and reliability characteristics for an integrated high voltage LDMOS. A novel patterned gate design is proposed and implemented in a 120V-rated NLDMOS. Optimal design characteristics are demonstrated with 30% improvement in switching FOM (Ron, sp*Qgg) and a robust Id, lin shift passing 15 years lifetime specification. The new design technique is proven to significantly improve the high voltage LDMOS design tradeoff.

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2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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