SOI四栅晶体管的仿真研究

2012 International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2012-03-15 DOI:10.1109/ICDCSYST.2012.6188709

B. Debnath, M. S. Islam, S. L. Noor, M. Hassan, A. Haq, M. Z. R. Khan

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引用次数: 4

摘要

研究了绝缘体上硅(SOI)四栅极晶体管(G4-FET)的结构及其在不同偏置条件下的不同参数。利用Silvaco/Atlas三维模拟器建立了G4-FET模拟模型，该模型包含了浓度依赖迁移率、Shockley-Read-Hall复合、Auger复合、带隙缩小效应等非理想效应。该模型可用于测量SOI四栅极晶体管的参数依赖性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simulation study of SOI four gate transistor

The structure of silicon-on-insulator (SOI) four-gate transistor (G4-FET) and its different parameters for different biasing conditions are studied. A G4-FET simulation model was developed by Silvaco/Atlas 3-D simulator which incorporates non-ideal effects like concentration dependent mobility, Shockley-Read-Hall recombination, Auger recombination, bandgap narrowing effect. This model can be useful in measuring parameters dependency of a SOI four gate transistor.

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2012 International Conference on Devices, Circuits and Systems (ICDCS)

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