CORE-VR:一种具有一致性和可重用性的多核低电压容错缓存

A. Choudhury, B. Sikdar
{"title":"CORE-VR:一种具有一致性和可重用性的多核低电压容错缓存","authors":"A. Choudhury, B. Sikdar","doi":"10.1109/DFT.2019.8875457","DOIUrl":null,"url":null,"abstract":"Voltage scaling to reduce power consumption for ensuring longer battery life expedites SRAM cell failures due to process variations. Cache, holding significant chip area, encounters these cell failures exponentially with voltage reduction. Several voltage reduction techniques have been proposed by tolerating faults at the cost of sacrificial cache portions affecting effective cache capacity. On this outset, this work attempts to minimize power below threshold by handling faults without affecting effective cache capacity. Words under priority blocks addressed on faulty cache portions are remapped in non-functional blocks to avoid cache pollution. Blocks are prioritized considering their coherence states and reusability. Non-reusable clean copies are invalidated to ensure adequate space for remapping and maintaining effective cache capacity. This work achieves minimum Vdd 325 mV with 7.77% area overhead with 6.7% leakage power and 0.5% dynamic power overhead in 90nm processor.","PeriodicalId":415648,"journal":{"name":"2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CORE-VR: A Coherence and Reusability Aware Low Voltage Fault Tolerant Cache in Multicore\",\"authors\":\"A. Choudhury, B. Sikdar\",\"doi\":\"10.1109/DFT.2019.8875457\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Voltage scaling to reduce power consumption for ensuring longer battery life expedites SRAM cell failures due to process variations. Cache, holding significant chip area, encounters these cell failures exponentially with voltage reduction. Several voltage reduction techniques have been proposed by tolerating faults at the cost of sacrificial cache portions affecting effective cache capacity. On this outset, this work attempts to minimize power below threshold by handling faults without affecting effective cache capacity. Words under priority blocks addressed on faulty cache portions are remapped in non-functional blocks to avoid cache pollution. Blocks are prioritized considering their coherence states and reusability. Non-reusable clean copies are invalidated to ensure adequate space for remapping and maintaining effective cache capacity. This work achieves minimum Vdd 325 mV with 7.77% area overhead with 6.7% leakage power and 0.5% dynamic power overhead in 90nm processor.\",\"PeriodicalId\":415648,\"journal\":{\"name\":\"2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DFT.2019.8875457\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DFT.2019.8875457","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

电压缩放以降低功耗以确保更长的电池寿命,从而加速SRAM电池因工艺变化而导致的故障。高速缓存,持有显著的芯片面积,遇到这些电池失效指数与电压降低。已经提出了几种以牺牲缓存部分影响有效缓存容量为代价的容错降压技术。在此基础上,本工作试图通过在不影响有效缓存容量的情况下处理故障,将功耗降至阈值以下。在故障缓存部分寻址的优先级块下的字被重新映射到非功能块中以避免缓存污染。根据块的一致性状态和可重用性对其进行优先级排序。不可重用的干净副本无效,以确保有足够的空间用于重新映射和维护有效的缓存容量。该工作在90nm处理器上实现了最小Vdd 325 mV,面积开销为7.77%,泄漏功率为6.7%,动态功率开销为0.5%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
CORE-VR: A Coherence and Reusability Aware Low Voltage Fault Tolerant Cache in Multicore
Voltage scaling to reduce power consumption for ensuring longer battery life expedites SRAM cell failures due to process variations. Cache, holding significant chip area, encounters these cell failures exponentially with voltage reduction. Several voltage reduction techniques have been proposed by tolerating faults at the cost of sacrificial cache portions affecting effective cache capacity. On this outset, this work attempts to minimize power below threshold by handling faults without affecting effective cache capacity. Words under priority blocks addressed on faulty cache portions are remapped in non-functional blocks to avoid cache pollution. Blocks are prioritized considering their coherence states and reusability. Non-reusable clean copies are invalidated to ensure adequate space for remapping and maintaining effective cache capacity. This work achieves minimum Vdd 325 mV with 7.77% area overhead with 6.7% leakage power and 0.5% dynamic power overhead in 90nm processor.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Rebooting Computing: The Challenges for Test and Reliability A Comprehensive Evaluation of the Effects of Input Data on the Resilience of GPU Applications On the Criticality of Caches in Fault-Tolerant Processors for Space On-line Testing for Autonomous Systems driven by RISC-V Processor Design Verification Understanding of GPU Architectural Vulnerability for Deep Learning Workloads
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1