镧系元素在微波器件平面工艺中的应用

D. Brinkevich, V. Prosolovich, Yu.N. Yankovski
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引用次数: 0

摘要

结果表明,硅的稀土掺杂在超高频场器件技术中具有重要的应用价值。使用稀土元素掺杂的硅作为外延层的衬底,可以提高p-n结和mos结构对辐射效应的稳定性。
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Lanthanides application in planar technology of microwave devices production
It is shown that rare-earth doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by rare-earth elements (REE) as substrates for epitaxial layers allows the improvement of the stability of p-n junctions and MOS-structures to radiation effects.
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