{"title":"PHEMTs -新兴的高性能设备","authors":"D. Helms","doi":"10.1109/SARNOF.1995.636675","DOIUrl":null,"url":null,"abstract":"PHEMTs, grown on GaAs and InP, due to their extremely high mobility, offer significant performance advantages from UHF to W-band: the lowest noise figures at the highest gains and very high power at the highest efficiencies. These performance improvements enable the development of major advances in systems applications. This presentation compares PHEMTs to MESFETs to show how each works and points out the advantages of using PHEMTs for systems applications.","PeriodicalId":118150,"journal":{"name":"IEEE Princeton Section Sarnoff Symposium","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"PHEMTs - Emerging High Performance Devices\",\"authors\":\"D. Helms\",\"doi\":\"10.1109/SARNOF.1995.636675\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"PHEMTs, grown on GaAs and InP, due to their extremely high mobility, offer significant performance advantages from UHF to W-band: the lowest noise figures at the highest gains and very high power at the highest efficiencies. These performance improvements enable the development of major advances in systems applications. This presentation compares PHEMTs to MESFETs to show how each works and points out the advantages of using PHEMTs for systems applications.\",\"PeriodicalId\":118150,\"journal\":{\"name\":\"IEEE Princeton Section Sarnoff Symposium\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Princeton Section Sarnoff Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SARNOF.1995.636675\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Princeton Section Sarnoff Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SARNOF.1995.636675","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
PHEMTs, grown on GaAs and InP, due to their extremely high mobility, offer significant performance advantages from UHF to W-band: the lowest noise figures at the highest gains and very high power at the highest efficiencies. These performance improvements enable the development of major advances in systems applications. This presentation compares PHEMTs to MESFETs to show how each works and points out the advantages of using PHEMTs for systems applications.
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