COM2 SiGe模块化BiCMOS技术，用于数字，混合信号和射频应用

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Pub Date : 2000-12-10 DOI:10.1109/IEDM.2000.904279

M. Carroll, T. Ivanov, S. Kuehne, J. Chu, C. King, M. Frei, M. Mastrapasqua, R. Johnson, K. Ng, S. Moinian, S. Martin, C. Huang, T. Hsu, D. Nguyen, R. Singh, L. Fritzinger, T. Esry, W. Moller, B. Kane, G. Abeln, D. Hwang, D. Orphee, S. Lytle, M. Roby, D. Vitkavage, D. Chesire, R. Ashton, D. Shuttleworth, M. Thoma, S. Choi, S. Lewllen, P. Mason, T. Lai, H. Hsieh, D. Dennis, E. Harris, S. Thomas, R. Gregor, P. Sana, W. Wu

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引用次数: 14

摘要

COM2 SiGe模块化BiCMOS技术已经开发出来，可以有效地设计和制造数字、混合信号和射频集成电路，以及实现片上系统(SOC)集成。该技术基于0.16 /spl mu/m COM2数字CMOS工艺，采用1.5 V NMOS和PMOS晶体管，2.4 nm栅极氧化物，0.135 /spl mu/m栅极长度，高达7个金属电平。技术增强模块包括密集SRAM、SiGe NPN双极晶体管和各种无源元件，使COM2技术能够经济有效地优化，适用于广泛的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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COM2 SiGe modular BiCMOS technology for digital, mixed-signal, and RF applications

The COM2 SiGe modular BiCMOS technology has been developed to allow efficient design and manufacturing of digital, mixed-signal, and RF integrated circuits, as well as enabling system-on-chip (SOC) integration. The technology is based on the 0.16 /spl mu/m COM2 digital CMOS process which features 1.5 V NMOS and PMOS transistors with 2.4 nm gate oxide, 0.135 /spl mu/m gate length, and up to 7 metal levels. Technology enhancement modules including dense SRAM, SiGe NPN bipolar transistor, and a variety of passive components have been developed to allow the COM2 technology to be cost-effectively optimized for a wide range of applications.

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International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)

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