{"title":"基于CMOS技术的4.89 ghz低相位噪声压控振荡器","authors":"Yutong Ying, Lu Huang, Li Cai, F. Lin","doi":"10.1109/RFIT.2012.6401659","DOIUrl":null,"url":null,"abstract":"A 4.06-4.89 GHz, low phase noise symmetric complementary voltage controlled oscillator (VCO), which features an optimized capacitive feedback technique combined with RC source degeneration, is presented in this paper. Fabricated in 180nm CMOS technology, the proposed VCO obtained a measured corner frequency of 15-80 KHz. The measured phase noise at 1MHz offset from the 4.89GHz carrier is -119dBc/Hz. Occupying 0.15mm2 in 180nm CMOS technology under 2.5mW power consumption, an area-normalized figure-of-merit (FOMA) of 197.1dBc/Hz has been achieved.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 4.89-GHz low-phase-noise VCO in CMOS technology\",\"authors\":\"Yutong Ying, Lu Huang, Li Cai, F. Lin\",\"doi\":\"10.1109/RFIT.2012.6401659\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 4.06-4.89 GHz, low phase noise symmetric complementary voltage controlled oscillator (VCO), which features an optimized capacitive feedback technique combined with RC source degeneration, is presented in this paper. Fabricated in 180nm CMOS technology, the proposed VCO obtained a measured corner frequency of 15-80 KHz. The measured phase noise at 1MHz offset from the 4.89GHz carrier is -119dBc/Hz. Occupying 0.15mm2 in 180nm CMOS technology under 2.5mW power consumption, an area-normalized figure-of-merit (FOMA) of 197.1dBc/Hz has been achieved.\",\"PeriodicalId\":187550,\"journal\":{\"name\":\"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"91 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2012.6401659\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2012.6401659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 4.06-4.89 GHz, low phase noise symmetric complementary voltage controlled oscillator (VCO), which features an optimized capacitive feedback technique combined with RC source degeneration, is presented in this paper. Fabricated in 180nm CMOS technology, the proposed VCO obtained a measured corner frequency of 15-80 KHz. The measured phase noise at 1MHz offset from the 4.89GHz carrier is -119dBc/Hz. Occupying 0.15mm2 in 180nm CMOS technology under 2.5mW power consumption, an area-normalized figure-of-merit (FOMA) of 197.1dBc/Hz has been achieved.
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