MWIR InAsSb探测器开路电压工作的光电探测器结构

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) Pub Date : 2019-08-01 DOI:10.1109/RAPID.2019.8864418

T. Specht, Z. Taghipour, T. Ronningen, R. Fragasse, R. Tantawy, Shane Smith, E. Fuller, W. Khalil, S. Krishna

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引用次数: 2

摘要

与依赖于光电流的传统探测器不同，开路电压光电探测器的结构依赖于一个工作在零偏置的探测器。探测器的输出耦合到亚阈值区域的场效应管栅极。该探测器的辐射特性将被讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Photodetector Architecture for Open Circuit Voltage Operation of MWIR InAsSb Detectors

Unlike conventional detectors that rely on photocurrent, the open circuit voltage photodetector architecture relies on a detector operating in zero bias. The output from the detector is coupled to the gate of a FET in sub-threshold region. Radiometric characterization of this detector will be discussed.

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2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)

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