功率半导体器件线键合与焊料碰撞的比较研究

IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426) Pub Date : 2000-07-14 DOI:10.1109/IWIPP.2000.885185

Xingsheng Liu, Xiukuan Jing, G. Lu

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引用次数: 8

摘要

通过对功率半导体器件的线键合和凸焊的比较研究，指出了凸焊互连的优点。介绍了这两种技术的制造工艺、电性能、热性能和可靠性问题，并对结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A comparative study of wire bonding versus solder bumping of power semiconductor devices

Through a comparative study of wire bonding and solder bumping of power semiconductor devices, the advantages of solder bump interconnection are indicated. The fabrication process, electrical performance, thermal performance and reliability issues and results are presented and compared for these two technologies.

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IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426)

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