2.2ppm/°C带隙基准电压高阶温度补偿

Dmitry Osipov
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引用次数: 1

摘要

提出了一个2.2 ppm/°C电压基准,用于在读出应用特定集成电路中作为模拟到数字转换基准。所提出的电路使用可用于标准CMOS工艺的电阻,具有相反的符号温度系数。这使得两个带隙方案的叠加,一个向下凹和另一个向上凹电压温度依赖。使用两种类似的方案来完成任务,允许单个电路元件的拓扑匹配。通过0.35 μm工艺的仿真验证了所提供的原理图。在-20 ~ 85℃的温度范围内,模拟基准电压约为1.2 mV,变化约300 μV。工作温度范围为降低工业级,供电电压3.3V,工作温度范围内平均消耗电流为6:4μA。
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2.2ppm/°C bandgap voltage reference with high-order temperature compensation
A 2.2-ppm/°C voltage reference is proposed for use as an analog to digital conversion reference in readout application-specific integrated circuits. The proposed circuit uses resistors available for the standard CMOS process with opposite sign temperature coefficients. That enables a superposition of two bandgap schemes, one with downward concave and the other upward concave voltage temperature dependence. Using two similar schemes for the task allows topology matching of single circuit elements. The providen schematic is verified by simulation of the reference in 0.35 μm technology. The simulated reference provides a voltage of about 1.2 mV with the variation of ~300 μV in the temperature range -20 to 85°C. The operating temperature range is the reduced industrial grade, with a supply voltage of 3.3V, and an average consumption current of 6:4μA in the operating temperature range.
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