一种低噪声共面波导场效应管放大器

1977 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1977-06-21 DOI:10.1109/MWSYM.1977.1124400

J. Vokes, W. P. Barr, J. R. Dawsey, B. T. Hughes, Susan Shrubb

{"title":"一种低噪声共面波导场效应管放大器","authors":"J. Vokes, W. P. Barr, J. R. Dawsey, B. T. Hughes, Susan Shrubb","doi":"10.1109/MWSYM.1977.1124400","DOIUrl":null,"url":null,"abstract":"This paper describes on the advantages of figures of 2.2 dB at the factors affecting the performance of low noise FET amplifiers, with particular emphasis coplanar waveguide as the microwave circuit. RF results include overall amplifier noise 7.5 GHz from devices made from two quite different GaAs structures.","PeriodicalId":299607,"journal":{"name":"1977 IEEE MTT-S International Microwave Symposium Digest","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Low Noise FET Amplifier in Coplanar Waveguide\",\"authors\":\"J. Vokes, W. P. Barr, J. R. Dawsey, B. T. Hughes, Susan Shrubb\",\"doi\":\"10.1109/MWSYM.1977.1124400\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes on the advantages of figures of 2.2 dB at the factors affecting the performance of low noise FET amplifiers, with particular emphasis coplanar waveguide as the microwave circuit. RF results include overall amplifier noise 7.5 GHz from devices made from two quite different GaAs structures.\",\"PeriodicalId\":299607,\"journal\":{\"name\":\"1977 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1977-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1977.1124400\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1977.1124400","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文介绍了2.2 dB数字在影响低噪声场效应管放大器性能的因素中的优势，重点介绍了共面波导作为微波电路。RF结果包括由两种完全不同的GaAs结构制成的器件的总放大器噪声7.5 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Low Noise FET Amplifier in Coplanar Waveguide

This paper describes on the advantages of figures of 2.2 dB at the factors affecting the performance of low noise FET amplifiers, with particular emphasis coplanar waveguide as the microwave circuit. RF results include overall amplifier noise 7.5 GHz from devices made from two quite different GaAs structures.

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1977 IEEE MTT-S International Microwave Symposium Digest

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