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引用次数: 8

摘要

先进的工艺技术将需要更严格的IC设计轨迹自动化。设计规模将随着摩尔定律而增加,在未来几年接近10亿个晶体管。这使得SoC系统的设计具有前所未有的非人类历史复杂性。与此同时,硅制造的物理特性正在增加“硅的复杂性”。需要额外的设计步骤来解决串扰、电压降、天线规则和其他问题。与以前的技术节点相比,寄生效应的影响必须在IC设计流程的各个阶段加以解决。只有完全自动化的硅复杂性问题才能阻止设计生产力差距的扩大。
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Physical design challenges for billion transistor chips
Advancing process technology will necessitate and even more rigorous automation of the IC design trajectory. The design scale will increase with Moore's law, approaching 1,000,000,000 transistors in the coming years. This enables the design of SoC systems with complexities unprecedented unhuman history. At the same time the physics of silicon manufacturing is increasing the 'silicon complexity'. Additional design steps are required to address cross talk, voltage drop, antenna rules and others. Much more so than in previous technology nodes, the effects of parasitics must be addressed at various stages of the IC design flow. Nothing less than a full automation of the silicon complexity issues is required to stop the design productivity gap from growing.
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