S. Luning, P. Rousseau, P. Griffin, P. Carey, J. Plummer
{"title":"中低温下高浓度砷失活动力学","authors":"S. Luning, P. Rousseau, P. Griffin, P. Carey, J. Plummer","doi":"10.1109/IEDM.1992.307400","DOIUrl":null,"url":null,"abstract":"This work investigates the kinetics of arsenic deactivation at temperatures from 500 to 800 degrees C and for concentrations between 1*10/sup 20/ and 1*10/sup 21//cm/sup 3/. Using profiles created by repeated laser melt annealing, we determine mobility as a function of both active and inactive dopant concentration and then characterize the dynamics of carrier deactivation. We observe retrograde resistivity versus concentration at high doses, which is explained by a mobility reduction due to the inactive arsenic and by retrograde electrical activity of the dopant itself.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Kinetics of high concentration arsenic deactivation at moderate to low temperatures\",\"authors\":\"S. Luning, P. Rousseau, P. Griffin, P. Carey, J. Plummer\",\"doi\":\"10.1109/IEDM.1992.307400\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work investigates the kinetics of arsenic deactivation at temperatures from 500 to 800 degrees C and for concentrations between 1*10/sup 20/ and 1*10/sup 21//cm/sup 3/. Using profiles created by repeated laser melt annealing, we determine mobility as a function of both active and inactive dopant concentration and then characterize the dynamics of carrier deactivation. We observe retrograde resistivity versus concentration at high doses, which is explained by a mobility reduction due to the inactive arsenic and by retrograde electrical activity of the dopant itself.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307400\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307400","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Kinetics of high concentration arsenic deactivation at moderate to low temperatures
This work investigates the kinetics of arsenic deactivation at temperatures from 500 to 800 degrees C and for concentrations between 1*10/sup 20/ and 1*10/sup 21//cm/sup 3/. Using profiles created by repeated laser melt annealing, we determine mobility as a function of both active and inactive dopant concentration and then characterize the dynamics of carrier deactivation. We observe retrograde resistivity versus concentration at high doses, which is explained by a mobility reduction due to the inactive arsenic and by retrograde electrical activity of the dopant itself.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
