S. Ben Salem, A. Fakhfakh, M. Loulou, P. Loumeau, N. Masmoudi
{"title":"一个2.5 V 0.35 /spl mu/m CMOS电流输送和高频高q带通滤波器","authors":"S. Ben Salem, A. Fakhfakh, M. Loulou, P. Loumeau, N. Masmoudi","doi":"10.1109/ICM.2004.1434578","DOIUrl":null,"url":null,"abstract":"In this paper, we present a design of a CMOS current conveyor. Thus, the first step in our design was to improve static and dynamic behavior of second generation current conveyors. The translinear implementation in CMOS technology was first studied. We notice that it presents a lower RX than those of Y and Z. However, this value (about 1 k/spl Omega/) may reduces the RF design's performances such as filters and oscillators, so it became necessary to make an implementation of a new improved CCII structure for RF design's implementation. This new structure is used as a basic building block of a tunable current and voltage mode band-pass filter. The Q-factor and the central frequency can be electronically controlled by mean of DC bias current. To validate this result, a Pspice simulation results are presented showing very interesting frequency and Q factor performances (the central frequency is tunable in the range of 1.2-1.6 GHz and Q from 80 to 313).","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 2.5 V 0.35 /spl mu/m CMOS current conveyor and high frequency high-Q band-pass filter\",\"authors\":\"S. Ben Salem, A. Fakhfakh, M. Loulou, P. Loumeau, N. Masmoudi\",\"doi\":\"10.1109/ICM.2004.1434578\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present a design of a CMOS current conveyor. Thus, the first step in our design was to improve static and dynamic behavior of second generation current conveyors. The translinear implementation in CMOS technology was first studied. We notice that it presents a lower RX than those of Y and Z. However, this value (about 1 k/spl Omega/) may reduces the RF design's performances such as filters and oscillators, so it became necessary to make an implementation of a new improved CCII structure for RF design's implementation. This new structure is used as a basic building block of a tunable current and voltage mode band-pass filter. The Q-factor and the central frequency can be electronically controlled by mean of DC bias current. To validate this result, a Pspice simulation results are presented showing very interesting frequency and Q factor performances (the central frequency is tunable in the range of 1.2-1.6 GHz and Q from 80 to 313).\",\"PeriodicalId\":359193,\"journal\":{\"name\":\"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2004.1434578\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2004.1434578","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2.5 V 0.35 /spl mu/m CMOS current conveyor and high frequency high-Q band-pass filter
In this paper, we present a design of a CMOS current conveyor. Thus, the first step in our design was to improve static and dynamic behavior of second generation current conveyors. The translinear implementation in CMOS technology was first studied. We notice that it presents a lower RX than those of Y and Z. However, this value (about 1 k/spl Omega/) may reduces the RF design's performances such as filters and oscillators, so it became necessary to make an implementation of a new improved CCII structure for RF design's implementation. This new structure is used as a basic building block of a tunable current and voltage mode band-pass filter. The Q-factor and the central frequency can be electronically controlled by mean of DC bias current. To validate this result, a Pspice simulation results are presented showing very interesting frequency and Q factor performances (the central frequency is tunable in the range of 1.2-1.6 GHz and Q from 80 to 313).