LT-GaAs和LT-Al/sub 0.3/Ga/sub 0.7/As MISFET器件的物理分析模型

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI:10.1109/HKEDM.1999.836425

R. Rao, T. C. Chong, L. Tan, W. S. Lau, J. Liou

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引用次数: 1

摘要

本文描述了一种精确的物理分析模型，用于描述LT-GaAs和LT-Al/sub 0.3/Ga/sub 0.7/As MISFET器件的输出电流-电压特性和电子行为。该模型是由基本的半导体电荷分析导出的。在该模型中，采用Chang-Fetterman方程来近似电子漂移速度随电场的变化。与实验结果吻合良好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A physical analytical model for LT-GaAs and LT-Al/sub 0.3/Ga/sub 0.7/As MISFET devices

An accurate physical analytical model has been described for output current-voltage characteristics and for describing the behavior of electron in LT-GaAs and LT-Al/sub 0.3/Ga/sub 0.7/As MISFET devices. The model is derived from basic semiconductor charge analysis. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field. Excellent agreement with experimental results is shown.

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Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)

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