N. Negishi, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, N. Koshida
{"title":"一种先进的高效电子发射器件的表征","authors":"N. Negishi, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, N. Koshida","doi":"10.1109/IVNC.2004.1355017","DOIUrl":null,"url":null,"abstract":"We recently developed a new-type cold cathode termed HEED (High-Efficiency Electron-emission Device) based on the Metal-Insulator-Semiconductor (MIS) diode. It has been shown that by arranging the device and surface structures the emission characteristics can be significantly improved. Using the advanced HEED as an excitation source, a 4-inch prototype flat panel display has been fabricated on a glass substrate. The panel operates well with a practical brightness at a relatively low driving voltage. The occasional reactivation technique is very effective to prolong the operation life of this device.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of an advanced HEED (High Efficiency Electron-emission Device)\",\"authors\":\"N. Negishi, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, N. Koshida\",\"doi\":\"10.1109/IVNC.2004.1355017\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We recently developed a new-type cold cathode termed HEED (High-Efficiency Electron-emission Device) based on the Metal-Insulator-Semiconductor (MIS) diode. It has been shown that by arranging the device and surface structures the emission characteristics can be significantly improved. Using the advanced HEED as an excitation source, a 4-inch prototype flat panel display has been fabricated on a glass substrate. The panel operates well with a practical brightness at a relatively low driving voltage. The occasional reactivation technique is very effective to prolong the operation life of this device.\",\"PeriodicalId\":137345,\"journal\":{\"name\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC.2004.1355017\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2004.1355017","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of an advanced HEED (High Efficiency Electron-emission Device)
We recently developed a new-type cold cathode termed HEED (High-Efficiency Electron-emission Device) based on the Metal-Insulator-Semiconductor (MIS) diode. It has been shown that by arranging the device and surface structures the emission characteristics can be significantly improved. Using the advanced HEED as an excitation source, a 4-inch prototype flat panel display has been fabricated on a glass substrate. The panel operates well with a practical brightness at a relatively low driving voltage. The occasional reactivation technique is very effective to prolong the operation life of this device.