微电子封装用聚酰亚胺薄膜的原位表征

F. Windrich, M. Malanin, E. Bittrich, A. Schwarz, K. Eichhorn, B. Voit
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引用次数: 1

摘要

采用不同的原位方法对低温固化条件下的聚酰亚胺薄膜层进行了研究。采用原位傅里叶变换红外光谱、温度相关椭偏光谱和热分析方法分别表征了亚胺化程度、玻璃化转变温度和热稳定性。低温固化区的亚胺化程度很大程度上取决于上游光刻过程中紫外线诱导的网络形成。较高的交联密度可将亚胺化度从未曝光层的97.5%降低到高交联膜的73.2%。在固化温度低于230℃的情况下,玻璃化转变温度和热稳定性显著降低。当固化温度分别为350℃和230℃时,玻璃化转变温度从240℃降至218℃。通过对圆片翘曲度和弯曲度的测定,证明了薄膜屈服应力的平行减小。
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In-situ characterization of thin polyimide films used for microelectronic packaging
Different in-situ methods were utilized to study thin film polyimide layers in the context of low-temperature cure processes <230°. In-situ Fourier Transform Infrared Spectroscopy, temperature dependent Spectroscopic Ellipsometry and Thermal Analytical Methods were used to characterize the degree of imidization, glass transition temperature and thermal stability respectively. The final degree of imidization in the low-temperature cure region depends strongly on the UV induced network formation during the upstream Iithographic process. A higher crosslinking density reduces the degree of imidization from 97.5% for an unexposed layer to 73.2% for higher crosslinked film. Glass transition temperature and thermal stability are significantly reduced in the case of curing temperatures below 230°C. The glass transition temperature is decreased from 240°C to 218°C for cure temperatures of 350°C and 230°C respectively. The yielded film stress is reduced in parallel, which was proved by determination of wafer warpage and bow.
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