{"title":"全单片SiGe差分压控振荡器，适用于5 GHz无线应用","authors":"J. Plouchart, H. Ainspan, M. Soyuer, A. Ruehli","doi":"10.1109/RFIC.2000.854416","DOIUrl":null,"url":null,"abstract":"A fully integrated and differential SiGe VCO was designed for 5 GHz wireless applications. The measured phase noise is -98 dBc/Hz at 100 kHz offset off the 5 GHz carrier. It has a tuning range of 12.3% with a control voltage from 0 to 3 V, and a figure of merit of more than -180 dBc/Hz, The current drawn from 3 V is 5 mA for the core and 2.2 mA for the output buffers.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"73","resultStr":"{\"title\":\"A fully-monolithic SiGe differential voltage-controlled oscillator for 5 GHz wireless applications\",\"authors\":\"J. Plouchart, H. Ainspan, M. Soyuer, A. Ruehli\",\"doi\":\"10.1109/RFIC.2000.854416\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated and differential SiGe VCO was designed for 5 GHz wireless applications. The measured phase noise is -98 dBc/Hz at 100 kHz offset off the 5 GHz carrier. It has a tuning range of 12.3% with a control voltage from 0 to 3 V, and a figure of merit of more than -180 dBc/Hz, The current drawn from 3 V is 5 mA for the core and 2.2 mA for the output buffers.\",\"PeriodicalId\":305585,\"journal\":{\"name\":\"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"73\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2000.854416\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2000.854416","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A fully-monolithic SiGe differential voltage-controlled oscillator for 5 GHz wireless applications
A fully integrated and differential SiGe VCO was designed for 5 GHz wireless applications. The measured phase noise is -98 dBc/Hz at 100 kHz offset off the 5 GHz carrier. It has a tuning range of 12.3% with a control voltage from 0 to 3 V, and a figure of merit of more than -180 dBc/Hz, The current drawn from 3 V is 5 mA for the core and 2.2 mA for the output buffers.
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