G. Penazzi, A. Pecchia, F. Sacconi, M. Auf der Maur, M. Povolotskyi, G. Romano, A. Di Carlo
{"title":"用混合有限元/原子法模拟嵌入AlGaN纳米柱的GaN量子点光学特性","authors":"G. Penazzi, A. Pecchia, F. Sacconi, M. Auf der Maur, M. Povolotskyi, G. Romano, A. Di Carlo","doi":"10.1109/IWCE.2009.5091153","DOIUrl":null,"url":null,"abstract":"Calculations of optoelectronic properties of a GaN quantum dot embedded in an AlGaN nanocolumn are presented, using the TiberCAD simulator. The calculations emphasize the role of the growth direction in determining the quantum efficiency of such light emitting devices. Multiband kldrp is used, with corrections from drift diffusion and strain calculations. Results are discussed using an empirical tight binding method, with the same macroscopic corrections as for kldrp, implemented in TiberCAD framework itself.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Simulations of Optical Properties of a GaN Quantum Dot Embedded in a AlGaN Nanocolumn within a Mixed FEM/atomistic Method\",\"authors\":\"G. Penazzi, A. Pecchia, F. Sacconi, M. Auf der Maur, M. Povolotskyi, G. Romano, A. Di Carlo\",\"doi\":\"10.1109/IWCE.2009.5091153\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Calculations of optoelectronic properties of a GaN quantum dot embedded in an AlGaN nanocolumn are presented, using the TiberCAD simulator. The calculations emphasize the role of the growth direction in determining the quantum efficiency of such light emitting devices. Multiband kldrp is used, with corrections from drift diffusion and strain calculations. Results are discussed using an empirical tight binding method, with the same macroscopic corrections as for kldrp, implemented in TiberCAD framework itself.\",\"PeriodicalId\":443119,\"journal\":{\"name\":\"2009 13th International Workshop on Computational Electronics\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 13th International Workshop on Computational Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2009.5091153\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 13th International Workshop on Computational Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2009.5091153","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulations of Optical Properties of a GaN Quantum Dot Embedded in a AlGaN Nanocolumn within a Mixed FEM/atomistic Method
Calculations of optoelectronic properties of a GaN quantum dot embedded in an AlGaN nanocolumn are presented, using the TiberCAD simulator. The calculations emphasize the role of the growth direction in determining the quantum efficiency of such light emitting devices. Multiband kldrp is used, with corrections from drift diffusion and strain calculations. Results are discussed using an empirical tight binding method, with the same macroscopic corrections as for kldrp, implemented in TiberCAD framework itself.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
