用嵌入硅中硅纳米光子学设计高性能、高能效noc

E. Kakoulli, V. Soteriou, C. Koutsides, K. Kalli
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引用次数: 1

摘要

片上电链路表现出巨大的能量到带宽成本,而片上纳米光子学实现了高吞吐量,但节能通信,已成为多核芯片的替代互连。这里我们考虑完全嵌入在二氧化硅(SiO2)衬底内的硅纳米光子组件,而不是现有的表面硅纳米光子组件。由于纳米光子元件现在位于二氧化硅衬底的地下,因此可以实现非阻塞互连几何形状,从而提供更高的网络吞吐量。首先,我们使用基于商业工具的详细模拟来证明这种硅中硅(si)结构是可行的,然后通过利用基于si的网状互联拓扑和增强对角光通道来证明我们的概念验证,该拓扑与现有技术相比提供了更高的有效吞吐量和吞吐量功率比。
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Designing High-Performance, Power-Efficient NoCs With Embedded Silicon-in-Silica Nanophotonics
On-chip electrical links exhibit large energy-to-bandwidth costs, whereas on-chip nanophotonics, which attain high throughput, yet energy-efficient communication, have emerged as an alternative interconnect in multicore chips. Here we consider silicon nanophotonic components that are embedded completely within the silica (SiO2) substrate as opposed to existing die on-surface silicon nanophotonics. As nanophotonic components now reside subsurface, within the silica substrate, non-obstructive interconnect geometries offering higher network throughput can be implemented. First, we show using detailed simulations based on commercial tools that such Silicon-in-Silica (SiS) structures are feasible, and then demonstrate our proof of concept by utilizing a SiS-based mesh-interconnected topology with augmented diagonal optical channels that provides both higher effective throughput and throughput-to-power ratio versus prior-art.
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