可靠的自旋扭矩MRAM产品技术

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838467

J. Slaughter, K. Nagel, R. Whig, S. Deshpande, S. Aggarwal, M. Deherrera, J. Janesky, M. Lin, H. Chia, M. Hossain, S. Ikegawa, F. Mancoff, G. Shimon, J. Sun, M. Tran, T. Andre, S. Alam, F. Poh, J. Lee, Y. Chow, Y. Jiang, H. Liu, C. Wang, S. Noh, T. Tahmasebi, S. Ye, D. Shum

{"title":"可靠的自旋扭矩MRAM产品技术","authors":"J. Slaughter, K. Nagel, R. Whig, S. Deshpande, S. Aggarwal, M. Deherrera, J. Janesky, M. Lin, H. Chia, M. Hossain, S. Ikegawa, F. Mancoff, G. Shimon, J. Sun, M. Tran, T. Andre, S. Alam, F. Poh, J. Lee, Y. Chow, Y. Jiang, H. Liu, C. Wang, S. Noh, T. Tahmasebi, S. Ye, D. Shum","doi":"10.1109/IEDM.2016.7838467","DOIUrl":null,"url":null,"abstract":"In this paper we present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming before 260°C wave solder, and performance of a 256Mb, DDR3 ST-MRAM product chip.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"Technology for reliable spin-torque MRAM products\",\"authors\":\"J. Slaughter, K. Nagel, R. Whig, S. Deshpande, S. Aggarwal, M. Deherrera, J. Janesky, M. Lin, H. Chia, M. Hossain, S. Ikegawa, F. Mancoff, G. Shimon, J. Sun, M. Tran, T. Andre, S. Alam, F. Poh, J. Lee, Y. Chow, Y. Jiang, H. Liu, C. Wang, S. Noh, T. Tahmasebi, S. Ye, D. Shum\",\"doi\":\"10.1109/IEDM.2016.7838467\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming before 260°C wave solder, and performance of a 256Mb, DDR3 ST-MRAM product chip.\",\"PeriodicalId\":186544,\"journal\":{\"name\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2016.7838467\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838467","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 20

摘要

在本文中，我们概述了可靠和可制造的ST-MRAM的重要特性，以及两个领域的新成果:具有足够数据保留的pMTJ阵列，可在260°C波峰焊之前进行编程，以及256Mb DDR3 ST-MRAM产品芯片的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Technology for reliable spin-torque MRAM products

In this paper we present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming before 260°C wave solder, and performance of a 256Mb, DDR3 ST-MRAM product chip.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE International Electron Devices Meeting (IEDM)

自引率

0.00%

发文量