A. Nikiforov, V.V. Bykov, V. S. Figurov, A. Chumakov, P. Skorobogatov, V. A. Telets
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CMOS IC dose rate latch-up was investigated within 10 to 100/spl deg/C temperature range with pulsed laser simulator and flash X-ray machine. Devices were latch-up free at room temperature while either permanent latch-up or latch-up windows were detected in the range above 40/spl deg/C. The phenomenon analysis is performed.
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