石墨烯薄膜的交流电导率参数与太赫兹光谱

NAECON 2014 - IEEE National Aerospace and Electronics Conference Pub Date : 2014-06-24 DOI:10.1109/NAECON.2014.7045824

W.-D. Zhang, E. Brown, P. Pham, P. Burke

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引用次数: 0

摘要

利用非破坏性太赫兹标准子透射技术，获得了cvd生长的石墨烯薄膜在0.1 ~ 1.6太赫兹之间的复合电导率。导出了电离杂质散射宽度和化学势等关键参数。该技术可扩展到提取其他薄膜或具有高片导率的2DEG材料的复杂交流电导率参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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AC conductivity parameters of graphene films with THz spectroscopy

The complex conductivity of CVD-grown graphene films between 0.1 and 1.6 THz are obtained using a non-destructive THz etalon transmittance technique. Critical parameters such as ionized-impurity scattering width and chemical potential are derived. The technique can be extended to extract the complex ac conductivity parameters of other thin conducting films or 2DEG materials with high sheet conductance.

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NAECON 2014 - IEEE National Aerospace and Electronics Conference

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