{"title":"二维锁相反制导垂直腔面发射激光阵列","authors":"D. Zhou, L. Mawst","doi":"10.1109/ISLC.2000.882288","DOIUrl":null,"url":null,"abstract":"We demonstrate that 2D (4x4) VCSEL arrays can be designed to operate in a stable in-phase mode in good agreement with theory. Calculations show resonant couplings for the in-phase (out-of-phase) mode occurs when the inter-element spacing corresponds to an odd (even) integral number of half-waves of the antiguide. It consists of 27.5 pairs of AlAs-GaAs n-DBR, 23 pairs of AlGaAs-GaAs p-DBR and an optical cavity which includes 3-InGaAs quantum wells, GaAs barrier layers, and AlGaAs confinement layers for 980nm emission.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"2-D phased-locked antiguided vertical cavity surface emitting laser arrays\",\"authors\":\"D. Zhou, L. Mawst\",\"doi\":\"10.1109/ISLC.2000.882288\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate that 2D (4x4) VCSEL arrays can be designed to operate in a stable in-phase mode in good agreement with theory. Calculations show resonant couplings for the in-phase (out-of-phase) mode occurs when the inter-element spacing corresponds to an odd (even) integral number of half-waves of the antiguide. It consists of 27.5 pairs of AlAs-GaAs n-DBR, 23 pairs of AlGaAs-GaAs p-DBR and an optical cavity which includes 3-InGaAs quantum wells, GaAs barrier layers, and AlGaAs confinement layers for 980nm emission.\",\"PeriodicalId\":322366,\"journal\":{\"name\":\"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2000.882288\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882288","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We demonstrate that 2D (4x4) VCSEL arrays can be designed to operate in a stable in-phase mode in good agreement with theory. Calculations show resonant couplings for the in-phase (out-of-phase) mode occurs when the inter-element spacing corresponds to an odd (even) integral number of half-waves of the antiguide. It consists of 27.5 pairs of AlAs-GaAs n-DBR, 23 pairs of AlGaAs-GaAs p-DBR and an optical cavity which includes 3-InGaAs quantum wells, GaAs barrier layers, and AlGaAs confinement layers for 980nm emission.
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