{"title":"氮化碳沉积方法综述","authors":"M. Mirkowska, K. Zdunek","doi":"10.1109/WBL.2001.946561","DOIUrl":null,"url":null,"abstract":"Carbon nitride is an example of real engineering efforts in the field of materials engineering. It has been designed based on a detailed analysis of the theory of a solid body, its identification data have been calculated and then technological experiments have been carried out. Now it is known that carbon nitride is a high-pressure phase and, thus, under conditions of layer synthesis, it may be unstable. All the synthesis methods used nowadays employ electric activation of the synthesis medium, Electric energy is thus an additional state parameter. The paper presents a literature review of the methods for the synthesis of carbon nitride, such as: PLA, LCVD, RFCVD, MWCVD, HFCVD, DSPVD, TSPVD, IBS, DCM, SAIP, FAD, IPD.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Carbon nitride - the review of deposition methods\",\"authors\":\"M. Mirkowska, K. Zdunek\",\"doi\":\"10.1109/WBL.2001.946561\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Carbon nitride is an example of real engineering efforts in the field of materials engineering. It has been designed based on a detailed analysis of the theory of a solid body, its identification data have been calculated and then technological experiments have been carried out. Now it is known that carbon nitride is a high-pressure phase and, thus, under conditions of layer synthesis, it may be unstable. All the synthesis methods used nowadays employ electric activation of the synthesis medium, Electric energy is thus an additional state parameter. The paper presents a literature review of the methods for the synthesis of carbon nitride, such as: PLA, LCVD, RFCVD, MWCVD, HFCVD, DSPVD, TSPVD, IBS, DCM, SAIP, FAD, IPD.\",\"PeriodicalId\":315832,\"journal\":{\"name\":\"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WBL.2001.946561\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WBL.2001.946561","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Carbon nitride is an example of real engineering efforts in the field of materials engineering. It has been designed based on a detailed analysis of the theory of a solid body, its identification data have been calculated and then technological experiments have been carried out. Now it is known that carbon nitride is a high-pressure phase and, thus, under conditions of layer synthesis, it may be unstable. All the synthesis methods used nowadays employ electric activation of the synthesis medium, Electric energy is thus an additional state parameter. The paper presents a literature review of the methods for the synthesis of carbon nitride, such as: PLA, LCVD, RFCVD, MWCVD, HFCVD, DSPVD, TSPVD, IBS, DCM, SAIP, FAD, IPD.