{"title":"改进的20 V侧沟栅功率mosfet，导通电阻极低，为7.8 m/spl ω //spl middot/mm/sup 2/","authors":"A. Nakagawa, Y. Kawaguchi","doi":"10.1109/ISPSD.2000.856770","DOIUrl":null,"url":null,"abstract":"We propose an improved lateral trench gate MOSFET with a new trench drain contact. The device is predicted to achieve 25 V breakdown voltage and a very low on-resistance of 7.8 m/spl Omega//spl middot/mm/sup 2/, which is by 20% lower than that of previously proposed standard lateral trench gate MOSFETs. The proposed trench contact uniformly distributes the electron current in the drift layer, and effectively reduces the device on-resistance. In the present paper, we also show the detailed electrical characteristics of the fabricated standard trench gate LDMOS. The large current turn-off capability of 1.1/spl times/10/sup 4/ A/cm/sup 2/ was achieved by the fabricated device.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Improved 20 V lateral trench gate power MOSFETs with very low on-resistance of 7.8 m/spl Omega//spl middot/mm/sup 2/\",\"authors\":\"A. Nakagawa, Y. Kawaguchi\",\"doi\":\"10.1109/ISPSD.2000.856770\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose an improved lateral trench gate MOSFET with a new trench drain contact. The device is predicted to achieve 25 V breakdown voltage and a very low on-resistance of 7.8 m/spl Omega//spl middot/mm/sup 2/, which is by 20% lower than that of previously proposed standard lateral trench gate MOSFETs. The proposed trench contact uniformly distributes the electron current in the drift layer, and effectively reduces the device on-resistance. In the present paper, we also show the detailed electrical characteristics of the fabricated standard trench gate LDMOS. The large current turn-off capability of 1.1/spl times/10/sup 4/ A/cm/sup 2/ was achieved by the fabricated device.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"107 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856770\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856770","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improved 20 V lateral trench gate power MOSFETs with very low on-resistance of 7.8 m/spl Omega//spl middot/mm/sup 2/
We propose an improved lateral trench gate MOSFET with a new trench drain contact. The device is predicted to achieve 25 V breakdown voltage and a very low on-resistance of 7.8 m/spl Omega//spl middot/mm/sup 2/, which is by 20% lower than that of previously proposed standard lateral trench gate MOSFETs. The proposed trench contact uniformly distributes the electron current in the drift layer, and effectively reduces the device on-resistance. In the present paper, we also show the detailed electrical characteristics of the fabricated standard trench gate LDMOS. The large current turn-off capability of 1.1/spl times/10/sup 4/ A/cm/sup 2/ was achieved by the fabricated device.
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