Francesco Trevisan, A. Raffo, G. Bosi, V. Vadalà, G. Vannini, G. Formicone, J. Burger, J. Custer
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引用次数: 0
摘要
本文介绍了一种用于研究氮化镓场效应管中降解现象的自动测量系统。该系统能够在实际设备操作下执行静态和动态应力循环，收集与设备“健康”严格相关的有用信息。作为案例研究，使用75-VDC GaN HEMT进行了19小时的压力测试，证明了在压力实验中设备性能略有下降。
75-VDC GaN technology investigation from a degradation perspective
In this paper an automated measurement system for the investigation of degradation phenomena in GaN FETs is presented. The system is able to perform both static and dynamic stress cycles under actual device operation, gathering useful information strictly related to the “health” of the device. As case study a 75-VDC GaN HEMT was used for a 19-hours stress test, putting in evidence how the device performance slightly degrades during the stress experiment.
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