SCR-LDMOS。一种具有ESD稳健性的新型LDMOS器件

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856839

S. Pendharkar, R. Teggatz, J. Devore, J. Carpenter, T. Efland, C. Tsai

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引用次数: 47

摘要

提出了一种具有很高ESD(静电放电)稳健性的新型横向功率器件结构。这种器件称为SCR-LDMOS，是对横向LDMOSFET的改进，具有良好的导通状态和阻塞特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SCR-LDMOS. A novel LDMOS device with ESD robustness

A novel lateral power device structure with a very high degree of ESD (electrostatic discharge) robustness is presented. This device called the SCR-LDMOS is a modification of the lateral LDMOSFET with good on state and blocking characteristics.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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