{"title":"Eprom编程特性仿真","authors":"T. Ural, Z. Peng, J. Frey, N. Goldsman","doi":"10.1049/EL:19900467","DOIUrl":null,"url":null,"abstract":"An efficient method for the simulation of EPROM programming based on hydrodynamic calculations of electron energy within the device, is described. After the nonMaxwellian energy distribution is calculated, an expression for injected gate current is integrated to find the total gate charge and hence the threshold voltage shift, as a function of time. Comparison of theoretical and experimental results for actual EPROM programming validates this method.","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Simulation Of Eprom Programming Characteristics\",\"authors\":\"T. Ural, Z. Peng, J. Frey, N. Goldsman\",\"doi\":\"10.1049/EL:19900467\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An efficient method for the simulation of EPROM programming based on hydrodynamic calculations of electron energy within the device, is described. After the nonMaxwellian energy distribution is calculated, an expression for injected gate current is integrated to find the total gate charge and hence the threshold voltage shift, as a function of time. Comparison of theoretical and experimental results for actual EPROM programming validates this method.\",\"PeriodicalId\":348970,\"journal\":{\"name\":\"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/EL:19900467\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/EL:19900467","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An efficient method for the simulation of EPROM programming based on hydrodynamic calculations of electron energy within the device, is described. After the nonMaxwellian energy distribution is calculated, an expression for injected gate current is integrated to find the total gate charge and hence the threshold voltage shift, as a function of time. Comparison of theoretical and experimental results for actual EPROM programming validates this method.
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