{"title":"先进MOS技术的片上宽带特性","authors":"J. Raskin","doi":"10.1109/EMICC.2006.282793","DOIUrl":null,"url":null,"abstract":"A full frequency band analysis is precious for separating physical phenomena taking place in MOS devices. Based on the extraction of a wideband equivalent small-signal circuit, various MOS technologies can be fairly compared and compact models with increase validity domain can be established. The extracted values for the various parameters constituting the electrical equivalent circuit of a particular device are useful not only for integrated circuit designers but also for the engineers at the early stage of the technology development. In this paper, the wideband characterization of several advanced MOS transistors is presented and discussed","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On-wafer wideband characterization of advanced MOS technologies\",\"authors\":\"J. Raskin\",\"doi\":\"10.1109/EMICC.2006.282793\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A full frequency band analysis is precious for separating physical phenomena taking place in MOS devices. Based on the extraction of a wideband equivalent small-signal circuit, various MOS technologies can be fairly compared and compact models with increase validity domain can be established. The extracted values for the various parameters constituting the electrical equivalent circuit of a particular device are useful not only for integrated circuit designers but also for the engineers at the early stage of the technology development. In this paper, the wideband characterization of several advanced MOS transistors is presented and discussed\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282793\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282793","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On-wafer wideband characterization of advanced MOS technologies
A full frequency band analysis is precious for separating physical phenomena taking place in MOS devices. Based on the extraction of a wideband equivalent small-signal circuit, various MOS technologies can be fairly compared and compact models with increase validity domain can be established. The extracted values for the various parameters constituting the electrical equivalent circuit of a particular device are useful not only for integrated circuit designers but also for the engineers at the early stage of the technology development. In this paper, the wideband characterization of several advanced MOS transistors is presented and discussed
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